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PDF IRHNA9160 Data sheet ( Hoja de datos )
| Número de pieza | IRHNA9160 | |
| Descripción | TRANSISTOR P-CHANNEL | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.1433
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHNA9160
P-CHANNEL
RAD HARD
-100Volt, 0.087Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 rads (Si). Under identical pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier’s P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the RAD HARD
process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and reli-
ability in the industry.
P- Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power sup-
plies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons envi-
ronments.
Product Summary
Part Number
BVDSS
IRHNA9160
-100V
RDS(on)
0.087Ω
ID
-38A
Features:
s Radiation Hardened up to 1 x 105 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-ElectricalTest Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Lightweight
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = -12V, TC = 25oC
ID @ VGS = -12V, TC = 100oC
IDM
PD @ TC = 25oC
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
StorageTemperature Range
Package Mounting Surface Temperature
Weight
IRHNA9160
-38
-24
-152
300
2.4
±20
500
-38
30
-5.5
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
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