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PDF IRHNA593160 Data sheet ( Hoja de datos )
| Número de pieza | IRHNA593160 | |
| Descripción | (IRHNA593160 / IRHNA597160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) | |
| Fabricantes | International Rectifier | |
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PD-94493A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level Rds(on)
IRHNA597160 100K Rads (Si) 0.049Ω
IRHNA593160 300K Rads (Si) 0.049Ω
ID Q
-47A
-47A
IRHNA597160
100V, P-CHANNEL
5 TECHNOLOGY
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm2)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC =100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-47
-30 A
-188
250 W
2.0 W/°C
±20 V
400 mJ
-47 A
25 mJ
-10 V/ns
-55 to 150
oC
300 ( for 5s )
3.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
03/16/06
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Pre-Irradiation
IRHNA597160
10000
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
0
1
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID =--4572A
16
12
VDS =-80V
VDS =-50V
VDS =-20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
1.5 3.0 4.5
-VSD,Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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