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PDF IRHNA57Z60 Data sheet ( Hoja de datos )

Número de pieza IRHNA57Z60
Descripción (IRHNA5xZ60) RADIATION HARDENED POWER MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 91787H
IRHNA57Z60
RADIATION HARDENED
JANSR2N7467U2
POWER MOSFET
30V, N-CHANNEL
SURFACE MOUNT (SMD-2)
Product Summary
REF: MIL-PRF-19500/683
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57Z60 100K Rads (Si) 0.003575A* JANSR2N7467U2
IRHNA53Z60 300K Rads (Si) 0.003575A* JANSF2N7467U2
IRHNA54Z60 500K Rads (Si) 0.003575A* JANSG2N7467U2
IRHNA58Z60 1000K Rads (Si) 0.004075A* JANSH2N7467U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
0.83
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/24/06
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IRHNA57Z60 pdf
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Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
20000
15000
10000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Ciss
5000
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 45 A
15
VDS = 24V
VDS = 15V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 25 50 75 100 125 150 175 200 225
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 25° C
TJ = 150° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
1ms
10 10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1 1
10
VDS , Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
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