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PDF IRHNA58260 Data sheet ( Hoja de datos )
| Número de pieza | IRHNA58260 | |
| Descripción | (IRHNA5x260) N-CHANNEL | |
| Fabricantes | International Rectifier | |
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PD - 91838C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA57260 100K Rads (Si)
IRHNA53260 300K Rads (Si)
IRHNA54260 600K Rads (Si)
IRHNA58260 1000K Rads (Si)
RDS(on)
0.038Ω
0.038Ω
0.038Ω
0.043Ω
ID
55A
55A
55A
55A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNA57260
200V, N-CHANNEL
R5 TECHNOLOGY
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
55
35
220
300
2.4
±20
380
55
30
9.2
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
11/19/99
DataSheet4 U .com
1 page  
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Pre-Irradiation
IRHNA57260
12000
10000
8000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
4000
Coss
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 55 A
15
VDS = 160V
VDS = 100V
VDS = 40V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 150° C
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
10
1
TJ = 25 ° C
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8 2.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10 10us
100us
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
1ms
10ms
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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