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PDF IRHNA58160 Data sheet ( Hoja de datos )

Número de pieza IRHNA58160
Descripción (IRHNA5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Fabricantes International Rectifier 
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PD - 91860H
IRHNA57160
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
JANSR2N7469U2
100V, N-CHANNEL
REF: MIL-PRF-19500/673
5 TECHNOLOGY
™
Part Number
IRHNA57160
IRHNA53160
IRHNA54160
IRHNA58160
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.012
0.012
0.012
0.013
ID QPL Part Number
75*A JANSR2N7469U2
75*A JANSF2N7469U2
75*A JANSG2N7469U2
75*A JANSH2N7469U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
69
300
250
2.0
±20
363
75
25
6.0
-55 to 150
300 (for 5s)
3.3 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/09/04
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IRHNA58160 pdf
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Pre-Irradiation
IRHNA57160, JANSR2N7469U2
10000
8000
6000
4000
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 475A
16
VVVDDDSSS
=
=
=
80V
50V
20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4
VSD ,Source-to-Drain Voltage (V)
1.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA LIMITED
BY R DS(ON)
10 100us
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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