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PDF IRHNA58064 Data sheet ( Hoja de datos )

Número de pieza IRHNA58064
Descripción (IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Fabricantes International Rectifier 
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PD - 91852G
IRHNA57064
RADIATION HARDENED
JANSR2N7468U2
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
60V, N-CHANNEL
REF: MIL-PRF-19500/673
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57064 100K Rads (Si) 0.005675*A JANSR2N7468U2
IRHNA53064 300K Rads (Si) 0.005675*A JANSF2N7468U2
IRHNA54064 600K Rads (Si) 0.005675*A JANSG2N7468U2
IRHNA58064 1000K Rads (Si) 0.006575*A JANSH2N7468U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
4.4
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/09/04
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IRHNA58064 pdf
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Pre-Irradiation
IRHNA57064, JANSR2N7468U2
10000
8000
6000
4000
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
2000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 45A
16
VVDDSS
=
=
48V
30V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 25 50 75 100 125 150 175 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 150° C
100
TJ = 25 ° C
10
0.4
VGS = 0 V
0.6 0.8 1.0 1.2 1.4
VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100
100µs
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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