|
|
PDF IRHN9250 Data sheet ( Hoja de datos )
| Número de pieza | IRHN9250 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHN9250 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 91300D
RADIATION HARDENED
IRHN9250
JANSR2N7423U
POWER MOSFET
200V, P-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHN9250 100K Rads (Si)
IRHN93250 300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID
-14A
-14A
QPL Part Number
JANSR2N7423U
JANSF2N7423U
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
SMD-1
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n CeramicPackage
n Light Weight
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
-55 to 150
300 ( for 5s)
2.6 (typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
06/06/03
DataSheet4 U .com
1 page  
www.DataSheet4U.com
Pre-Irradiation
IRHN9250, JANSR2N7423U
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
Crss
0
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
20 ID = -14 A
16
VDS
VDS
VDS
=-160V
=-100V
=-40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200
QG, Total Gate Charge (nC)
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
TJ = 150° C
10 TJ = 25°C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-VSD ,Source-to-Drain Voltage (V)
Fig7. TypicalSource-DrainDiode
ForwardVoltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
10ms
100
-VDS, Drain-to-Source Voltage (V)
1000
Fig8. MaximumSafeOperatingArea
5
DataSheet4 U .com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHN9250.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHN9250 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |