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PDF IRHN9150 Data sheet ( Hoja de datos )
| Número de pieza | IRHN9150 | |
| Descripción | TRANSISTOR P-CHANNEL | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.885
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN9150
P-CHANNEL
RAD HARD
-100 Volt, 0.120Ω, RAD HARD HEXFET
Product Summary
International Rectifier’s P-channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 105 Rads (Si). Under
identical pre- and post-radiation test conditions, In-
ternational Rectifier’s P-channelRAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect, (SEE),
testing of International Rectifier’s P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOS-
FETs, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electri-
cal parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Part Number
IRHN9150
BV DSS
-100V
RDS(on)
0.120Ω
ID
-22A
Features:
s Radiation Hardened up to 1 x 105 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Lightweight
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mount Surface Temperature
Weight
IRHN9150
-22
-14
-88
150
1.2
±20
500
-22
15
-5.5
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
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