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PDF IRHN8450 Data sheet ( Hoja de datos )
| Número de pieza | IRHN8450 | |
| Descripción | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 90819A
IRHN7450
IRHN8450
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7270U
HEXFET® TRANSISTOR
JANSH2N7270U
N CHANNEL
MEGA RAD HARD
500Volt, 0.45Ω, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings
Part Number
IRHN7450
IRHN8450
BVDSS
500V
500V
RDS(on)
0.45Ω
0.45Ω
ID
11A
11A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Surface Mount
n Light Weight
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRHN7450, IRHN8450 Units
Continuous Drain Current
Continuous Drain Current
11
7.0 A
Pulsed Drain Current
44
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current
11 A
Repetitive Avalanche Energy
15 mJ
Peak Diode Recovery dv/dt
3.5 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
2.6 (typical)
g
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1
02/01/99
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Post-Irradiation
IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts
During Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress
Equals 80% of BVDSS
During Radiation
Fig 9.HighDoseRate
(Gamma Dot) Test Circuit
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Pre-Irradiation
IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
15V
VDS
L
D R IV E R
RG
12 20 VV
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 29a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig30a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRHN8450.PDF ] | |
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