DataSheet.es    


PDF IRHN8230 Data sheet ( Hoja de datos )

Número de pieza IRHN8230
Descripción (IRHN7230 / IRHN8230) TRANSISTOR N-CHANNEL
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRHN8230 (archivo pdf) en la parte inferior de esta página.


Total 14 Páginas

No Preview Available ! IRHN8230 Hoja de datos, Descripción, Manual

www.DataShePetr4eUv.ciooums Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.822A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7230
IRHN8230
N-CHANNEL
MEGA RAD HARD
200 Volt, 0.40, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Product Summary
Part Number
BVDSS
IRHN7230
200V
IRHN8230
200V
RDS(on)
0.40
0.40
ID
9.0A
9.0A
Features:
s Radiation Hardened up to 1 x 106 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
DataSheet4 U .com
Weight
To Order
IRHN7230, IRHN8230
9.0
6.0
36
75
0.60
±20
330 (see fig. 29)
9.0
7.5
5.0 (see fig. 30)
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g

1 page




IRHN8230 pdf
www.DataShePetr4eUv.ciooums Datasheet
IRHN7230, IRHN8230 Devices
Index
Next Data Sheet
Post-Radiation
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure
Figure 6. – Typical On-State Resistance Vs. Neutron
Fluence Level
Figure 8a. – Gate
Stress of VGSS Equals
12 Volts During
Radiation
Figure 7. – Typical Transient Response
of Rad Hard HEXFET During 1 x1012
Rad (Si)/Sec Exposure
DataSheet4 U .com
Figure 8b. – VDSS Stress
Equals 80% of BVDSS During
Radiation
To Order
Figure 9. – High Dose Rate
(Gamma Dot) Test Circuit

5 Page





IRHN8230 arduino
www.DataShePetr4eUv.ciooums Datasheet
IRHN7230, IRHN8230 Devices
Index
Next Data Sheet
Pre-Radiation
Figure 28a. – Switching Time Test Circuit
Figure 28b. – Switching Time Waveforms
Figure 29a. – Unclamped Inductive Test Curcuit
Figure 29b. – Unclamped Inductive Waveforms
DataSheet4 U .com
To Order

11 Page







PáginasTotal 14 Páginas
PDF Descargar[ Datasheet IRHN8230.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRHN8230(IRHN7230 / IRHN8230) TRANSISTOR N-CHANNELInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar