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PDF IRHN4150 Data sheet ( Hoja de datos )
| Número de pieza | IRHN4150 | |
| Descripción | (IRHNx150) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
| Fabricantes | International Rectifier | |
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PD - 90720C
RADIATION HARDENED
IRHN7150
JANSR2N7268U
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/603
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHN7150 100K Rads (Si) 0.065Ω 34A JANSR2N7268U
IRHN3150 300K Rads (Si) 0.065Ω 34A JANSF2N7268U
IRHN4150 600K Rads (Si) 0.065Ω 34A JANSG2N7268U
IRHN8150 1000K Rads (Si) 0.065Ω 34A JANSH2N7268U
SMD-1
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
Features:
space applications. This technology has over a de-
n Single Event Effect (SEE) Hardened
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
300 ( for 5s)
2.6 (Typical )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
02/01/01
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1 page  
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Pores-tI-rIrraraddiaiatitoionn
IRHN7150, JANSR2N7268U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During 80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
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Pre-Irradiation
IRHN7150, JANSR2N7268U
15V
VDS
L
D R IV E R
RG
2V0 VGS
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 30a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRHN4150.PDF ] | |
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