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PDF PBLS1503V Data sheet ( Hoja de datos )

Número de pieza PBLS1503V
Descripción 15 V PNP BISS loadswitch
Fabricantes NXP Semiconductors 
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PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
Rev. 02 — 25 November 2004
Product data sheet
1. Product profile
1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
Table 1: Product overview
Type number
PBLS1503Y
PBLS1503V
Package
Philips
SOT363
SOT666
JEITA
SC-88
-
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low ‘threshold’ voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count.
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment.
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
TR1; PNP; low VCEsat transistor
VCEO
collector-emitter voltage open base
IC
RCEsat
collector current (DC)
equivalent on-resistance
IC = −500 mA;
IB = −50 mA
TR2; NPN; resistor-equipped transistor
VCEO
collector-emitter voltage open base
Min Typ Max Unit
- - 15 V
- - 500 mA
- 300 500 m
- - 50 V
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Philips Semiconductors
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
600
hFE
400
200
(1)
(2)
(3)
001aaa181
103
VCEsat
(mV)
102
10
001aaa185
(1)
(2)
(3)
0
101
1
10
102
103
IC (mA)
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 1. TR1(PNP): DC current gain as a function of
collector current; typical values.
1100
VBE
(mV)
900
700
500
300
(1)
(2)
(3)
001aaa183
1
101
1
10
102
103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 2. TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values.
1200
VBEsat
(mV)
1000
001aaa184
800
600
400
(1)
(2)
(3)
100
101
1
10
102
103
IC (mA)
200
101
1
10
102
103
IC (mA)
VCE = 2 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig 3. TR1(PNP): Base-emitter voltage as a function of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 4. TR1(PNP): Base-emitter saturation voltage as a
function of collector current; typical values.
9397 750 13435
Product data sheet
DataSheet4 U .com
Rev. 02 — 25 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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Philips Semiconductors
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
9. Packing information
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
PBLS1503Y
PBLS1503V
SOT363
SOT666
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping.
[3] T2: reverse taping.
Packing quantity
3 000
4 000
[2] -115
-
[3] -125
-
- -115
10 000
-135
-165
-
9397 750 13435
Product data sheet
DataSheet4 U .com
Rev. 02 — 25 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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