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Número de pieza | FS50SM-5A | |
Descripción | High-Speed Switching Use Nch Power MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FS50SM-5A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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FS50SM-5A
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 10 V
• VDSS : 250 V
• rDS(ON) (max) : 0.068 Ω
• ID : 50 A
Outline
TO-3P
2, 4
4
1
1
23
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REJ03G0277-0100
Rev.1.00
Aug.20.2004
1. Gate
2. Drain
3. Source
4. Drain
Applications
Switching mode power supply, plasma display TVs, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Ratings
250
±30
50
150
250
– 55 to +150
– 55 to +150
4.8
Unit
V
V
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
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FS50SM-5A
On-State Resistance vs.
Channel Temperature (Typical)
101
7 VGS = 10V
5
4
ID = 25A
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50
0
50 100 150
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
6
VDS = 10V
ID = 1mA
5 Pulse Test
4
3
2
1
0
–50
0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
1.6
VGS = 0V
ID = 1mA
Pulse Test
1.2
0.8
0.4
–50
0
100
7 D = 1.0
5
3 0.5
2
0.2
10–1 0.1
7
5
0.05
PDM
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0.02
0.01
Single Pulse
tw
T
D
=
tw
T
50 100 150
10–2
10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FS50SM-5A.PDF ] |
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