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PDF 2SC5848 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5848 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2079
Unit: mm
Features
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
Parameter
Collector-base voltage (Emitter open)
Symbol
VCBO
Rating
60
Unit
V
32
0.65±0.01
0.05±0.03
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC 100 mA
Peak collector current
ICP 200 mA
Collector power dissipation
PC 100 mW
1: Base
2: Emitter
3: Collector
Marking Symbol : 3E
ML3-N2 Package
Junction temperature
Tj 125 °C
Storage temperature
Tstg ww–5w5 .toD+a12ta5 She°eCt4U.com
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1 µA
Collector-emitter cut-off current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
180 390
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT VCB = 10 V, IE = –2 mA, f = 200 MHz 100 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
www.DataSheet4U.com
SJC00327AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5848.PDF ] | |
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