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PDF UPA1874 Data sheet ( Hoja de datos )
| Número de pieza | UPA1874 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1874
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µPA1874 is a switching device which can be
driven directly by a 2.5-V power source.
85
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• 2.5-V drive available
• Low on-state resistance
RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
1
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
3°
+5°
–3°
0.1±0.05
4
RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
3.15 ±0.15
• Built-in G-S protection diode against ESD
DataSheet4U3.c.0o±m0.1
6.4 ±0.2
4.4 ±0.1
0.25
0.5
0.6
+0.15
–0.1
DataShee
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1874GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note 1
Total Power Dissipation (2 unit) Note 2
ID(DC)
ID(pulse)
PT
±8.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
DataSheet4U.com
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15631EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
© 2001
1 page  
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µPA1874
et4U.com
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
SWITCHING CHARACTERISTICS
1000
td(off)
tf
tr
100
td(on)
VDD = 10 V
VGS = 4 V
10 RG = 10 Ω
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 V
10
DYNAMIC INPUT CHARACTERISTICS
5
ID = 8.0 A
VDD = 24 V
15 V
4 6V
3
1
2
DataSheet4U.com
0.1
1
0.01
0.4
0.6 0.8
1.0
VSD - Source to Drain Voltage - V
1.2
0
0 5 10 15
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
PD (FET1) : PD (FET2) = 1:1
100
Mounted on FR-4 board of 25 cm2 x 1.6 mm
125˚C/W
Mounted on Ceramic board of 50 cm2 x 1.1 mm
62.5˚C/W
10
20
DataShee
1
0.1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
100 1000
DataSheet4U.com
Data Sheet G15631EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1874.PDF ] | |
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