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PDF UPA1872B Data sheet ( Hoja de datos )
| Número de pieza | UPA1872B | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1872B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µ PA1872B is a switching device, which can be driven
directly by a 2.5 V power source.
8
5
The µ PA1872B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
FEATURES
• 2.5 V drive available
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
• Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
RDS(on)2 = 13.5 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)
RDS(on)3 = 15.5 mΩ MAX. (VGS = 3.1 V, ID = 5.0 A)
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
RDS(on)4 = 18.0 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
0.65 0.8 MAX.
DataSheet4U.com
0.27
+0.03
–0.08
0.10 M
0.1
PART NUMBER
PACKAGE
µ PA1872BGR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
20.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note 1
Drain Current (pulse) Note 2
Total Power Dissipation Note 1
VGSS
ID(DC)
ID(pulse)
PT
±12.0
±10.0
±80.0
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
DataShee
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16742EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
DataSheePt4rinUte.dcion mJapan
2004
1 page  
www.DataSheet4U.com
µ PA1872B
et4U.com
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
TA = 125°C
75°C
25°C
20 −25°C
VGS = 3.1 V
Pulsed
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = 2.5 V
Pulsed
30 TA = 125°C
75°C
25°C
20 −25°C
10
0
0.1
1 10
ID - Drain Current - A
100
0
0.1
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40 40
ID = 5.0 A
Pulsed
30 30
ID = 5.0 A
Pulsed
VGS = 2.5 V
3.1 V
20 20 4.0 V
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4.5 V
10 10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
0
-50
0 50 100
Tch - Channel Temperature - °C
150
1000
SWITCHING CHARACTERISTICS
td(off)
tf
100 tr
10
0.1
td(on)
VDD = 10.0 V
VGS = 4.0 V
RG = 10 Ω
1
ID - Drain Current - A
10
DataShee
DataSheet4U.com
Data Sheet G16742EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA1872B.PDF ] | |
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