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PDF UPA1871 Data sheet ( Hoja de datos )

Número de pieza UPA1871
Descripción N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Fabricantes NEC 
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1871
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1871 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1871 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 26.0 mMAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 27.0 mMAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 38.0 mMAX. (VGS = 2.5 V, ID = 3.0 A)
Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
3°
0.1±0.05
0.5
0.6
+0.15
0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
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PART NUMBER
PACKAGE
µ PA1871GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
0.08
0.10 M
DataShee
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
±6.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 50 cm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14887EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
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The mark 5 shows major revised points.
©
2000

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UPA1871 pdf
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µPA1871
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1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
10
0.1
VDD = 10 V
VGS(on) = 4 V
RG = 10
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 0V
10
1
0.1
0.01
0.4
0.6 0.8
1 1.2
VF(S-D) - Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS
6
ID = 6.0 A
5
4 VDD = 24 V
15 V
10 V
3
2
1 DataSheet4U.com
0
0 1 2 3 4 5 6 7 8 9 10
Qg - Gate Charge - nC
5
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 62.5 ˚C/W
10
1
0.1
1m
10 m
Single Pulse
Mounted on Ceramic Board of
50 cm2 x 1.1 mm
PD(FET1) : PD(FET2) = 1 : 1
100 m
1
10
PW - Pulse Width - s
100 1000
DataShee
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Data Sheet G14887EJ2V0DS
5

5 Page










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