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PDF TBB1010 Data sheet ( Hoja de datos )
| Número de pieza | TBB1010 | |
| Descripción | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier | |
| Fabricantes | Renesas Technology | |
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TBB1010
Twin Build in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
ADE-208-1607B (Z)
3rd. Edition
Feb. 2003
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• High |yfs|=29mS ×2
• Suitable for World Standard Tuner RF amplifier.
• Very useful for total tuner cost reduction.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
DataShee
Rs = 0 conditions.
• Provide mini mold packages; CMPAK-6
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Outline
CMPAK-6
Notes:
4
5
6
3
2
1
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
1. Marking is “KM”.
2. TBB1010 is individual type number of HITACHI TWIN BBFET.
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1 page  
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• Equivalent Circuit
No.1
Drain(1)
No.2
Source
No.3
Drain(2)
BBFET-(1)
BBFET-(2)
TBB1010
No.6
Gate-1(1)
No.5
Gate-2
No.4
Gate-1(2)
• 200 MHz Power Gain, Noise Figure Test Circuit
et4U.com
Input (50 Ω)
1000p
VT
1000p
VG2
1000p
1000p
47k
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47k TWINBBFET
L2
L1
1000p
36p
1SV70
R G 120k
VT
1000p
DataShee
1000p
RFC
47k
Output (50 Ω)
10p max
1SV70
1000p
V D= V G1
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Unit : Resistance (Ω)
Capacitance (F)
DataSheet4U.com
Rev.2, Feb. 2003, page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TBB1010.PDF ] | |
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