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PDF NIS6111 Data sheet ( Hoja de datos )
| Número de pieza | NIS6111 | |
| Descripción | Better Efficiency Rectifier System | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NIS6111 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NIS6111
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Better Efficiency Rectifier
System
Ultra Efficient, High Speed Diode
The NIS6111 ORing diode is a high speed, high efficiency, hybrid
rectifier, designed for low voltage, high current systems, such as
those required for today’s digital circuits. It couples a high speed
integrated circuit with a power MOSFET to create a diode with the
same forward drop characteristics as a MOSFET. It offers increased
efficiency for switching power supplies as well as in ORing diode
applications.
It offers a low on resistance that can be further reduced by the
addition of external MOSFETs. It features the highest reverse
recovery speed of any device in the industry.
Features
• Low Forward Drop Improves System Efficiency
• Ultra High Speed
• Can be used in High Side and Low Side Configurations
• 24 V Rating
• Allows use of External MOSFETs for ExtendedDCautrareSnhteHeat4ndUli.ncgom
Capacity
Applications
• Redundant Power Supplies for High−Availability Systems
• Static ORing Diodes
• Low Voltage, Isolated Outputs
• Flyback, Forward Converter, Half Bridge Converters
PIN ASSIGNMENT
Pin Symbol
Function
1 Anode Power Input Connected to System
2 Internal Output of Internal Voltage Regulator provides power for
5.0 V internal only. No external components required at this pin.
3 Gate Gate Driver Output for Internal and External
N−Channel MOSFET
4 Cathode Power Output Connected to System
5 Reg In Input of Internal Voltage Regulator
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
MARKING
DIAGRAM
1
PLLP32
CASE 488AC
TBD
1 32
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
5ÇÇÇÇÇÇÇÇPÇÇÇÇÇÇÇÇIN1ÇÇÇÇÇÇÇÇCONÇÇÇÇÇÇÇÇNEÇÇÇÇÇÇÇÇCT4IÇÇÇÇÇÇÇÇONÇÇÇÇÇÇÇÇS 3
2
(Bottom View)
4
Cathode
5
Reg In
3
Gate
Anode
1
NTD110N02R
Figure 1. Equivalent Circuit
ORDERING INFORMATION
Device
Package
Shipping†
NIS6111QPT1
PLLP32 2000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DataSheet4U.com
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. P3
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1
Publication Order Number:
NIS6111/D
DataShee
1 page  
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NIS6111
85
80
75 JA (A) − (A) Heated
70
65
60
55 JA (M) − (M) Heated
50
45
40
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500
COPPER AREA (mm2)
Figure 8. Thermal Resistance vs. Copper Area for MOSFET (M) and Analog Die (A)
6000
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5.15 V
Source 1
15 V
5.2 V
Source 2
I2
Load
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Figure 9. Test Circuit for Short Circuit ORing Test
Figure 10. Waveforms from Short Circuit ORing Test
18 V
Reg In
5.0 V
Anode
Gate
Cathode
Load
NTD110N02R
12 V
Load
Reg In
Cathode
Anode
Figure 11. Positive ORing Diode Connection with
Additional External FETs
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Figure 12. Negative ORing Diode Connection
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NIS6111.PDF ] | |
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