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PDF 2N7522 Data sheet ( Hoja de datos )
| Número de pieza | 2N7522 | |
| Descripción | Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel | |
| Fabricantes | International Rectifier | |
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Preliminary Data Sheet
Repetitive Avalanche and dv/dt Rated
MOSFET Transistor P-Channel
2N7522
200Volt, 0.505 Ω , RAD Hard MOSFET
Package: SMD-0.5
R5
Product Summary
Hex Size
Technology
3 RAD Hard
BVDSS
-200V
RDS (on)
0.505 Ω
ID
-8.0A
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
Continuous Drain Current
Continuous Drain Current
PD @ TC = 25°C
Power Dissipation
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
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EAR Repetitive Avalanche Energy
TJ Operating Junction Range
Value
-8.0
-5.0
75
±20
75
-8.0
7.5
-55 to 150
Units
A
A
W
V
mJ
A
mJ
°C
Pre-Irradiation
Electrical Characteristics @ TJ = 25° C (Unless Otherwise Specified)
Parameter
Min Typ. Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200
-
-
V VGS=0V, ID=-1.0mA
RDS(on) Static Drain-to-Source On-State
Resistance
-
-
0.505
Ω VGS=-12V, ID=-5.0A
VGS (th)
IDSS
IDSS
IGSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
-2.0 -
--
--
--
-4.0
-10
-25
-100
V VDS=VGS, ID=-1.0mA
µA VDS= -160V, VGS=0V
µA VDS =-160V, TJ=125°C
nA VGS=-20V
IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS=20V
Qg Total Gate Charge
- - 43 nC VGS=-12V, ID=-8.0A
Thermal Resistance
Parameter
RthJC Junction-to-Case
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Min Typ. Max Units
- - 1.67 °C/W
Test Conditions
01/23/01
DataShee
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N7522.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 2N7522 | Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel | International Rectifier |
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