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PDF SDU30N03L Data sheet ( Hoja de datos )
| Número de pieza | SDU30N03L | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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SamHop Microelectronics Corp.
SDU/D30N03L
JULY, 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mW ) TYP
30V 30A
11.5 @ VGS = 10V
17 @ VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
SDU SERIES
TO-252AA(D-PAK)
G
DS
SDD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
DataSheet4USy.cmobmol
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @TJ=125 C
-Pulsed a
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
PD
TJ, TSTG
Limit
30
20
30
90
30
50
0.3
-55 to 175
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3 C/W
Thermal Resistance, Junction-to-Ambient
R JA
50
C/W
1
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SDU/D30N03L
VDD
RL
VIN
D VOUT
VGS
RGEN G
S
Figure 11. Switching Test Circuit
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 12. Switching Waveforms
6
2
1
D=0.5
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0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. R£cJA (t)=r (t) * R£cJA
2. R£cJA=See Datasheet
3. TJM-TA = PDM* R£cJA (t)
4. Duty Cycle, D=t1/t2
1
10
Figure 13. Normalized Thermal Transient Impedance Curve
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SDU30N03L.PDF ] | |
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