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PDF SDU30N02 Data sheet ( Hoja de datos )
| Número de pieza | SDU30N02 | |
| Descripción | N-Channel E nhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SDU30N02 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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S DU/D30N02
S amHop Microelectronics C orp.
May,2004 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
20V 25A
20 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
D
G
S
S DU S E R IE S
T O -252AA(D-P AK )
GDS
S DD S E R IE S
TO-251(l-P AK)
G
S
AB S OLUTE MAXIMUM R ATINDGaStaS(hTeAe=t24U5.cComunless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
20
12
25
42
30
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
Operating and S torage Temperature R ange TJ, TS TG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
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R JC
R JA
50
-55 to 175
3
50
W
C
C /W
C /W
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1 page  
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S DU/D30N02
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
2
1
D =0 . 5
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0.2
0.1
0.1 0.05
0.02
0.01
0.01
10-5
S INGLE PULS E
10-4
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T c = P DM* R JC (t)
4. Duty C ycle, D=t1/t2
1
10
F igure 13. Normalized T hermal T rans ient Impedance C urve
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SDU30N02.PDF ] | |
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