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PDF P4NC60FP Data sheet ( Hoja de datos )

Número de pieza P4NC60FP
Descripción STP4NC60FP
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! P4NC60FP Hoja de datos, Descripción, Manual

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STP4NC60 - STP4NC60FP
STB4NC60-1
N-CHANNEL 600V - 1.8- 4.2A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC60
STP4NC60FP
STB4NC60-1
600V
600V
600V
< 2.2
< 2.2
< 2.2
4.2A
4.2A
4.2A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
TO-220
3
2
1
TO-220FP
I2PAK1 2 3
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 4.2A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
April 2003
Value
STP(B)4NC60(-1) STP4NC60FP
600
600
±30
4.2 4.2(*)
2.6 2.6(*)
16.8 16.8(*)
100 35
0.8 0.28
3.5 3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
–65 to 150
(*)Limited only by maximum Temperature allowed
°C
1/10

1 page




P4NC60FP pdf
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Gate Charge vs Gate-source Voltage
STP4NC60/FP/STB4NC60-1
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10

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