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Número de pieza | DIM100WHS17-A000 | |
Descripción | IGBT Power Module | |
Fabricantes | Dynex Semiconductor | |
Logotipo | ||
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DIM100WHS17-A000
DIM100WHS17-A000
Half Bridge IGBT Module
PDS5715-1.1 Febuary 2004
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Base Plate
APPLICATIONS
I Inverters
I Motor Controllers
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
100A
IC(PK)
(max)
200A
*(measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
1(E1C2)
2(E2)
The DIM100WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
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The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
3(C1)
4(G1)
5(E1)
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100WHS17-A000
TYPICAL CHARACTERISTICS
200
Common emitter.
Tcase = 25˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
200
Common emitter.
Tcase = 125˚C
175 Vce is measured at power busbars
and not the auxiliary terminals
150
125 125
100 100
et4U.com
75 75
50
25
0
0 0.5 1
1.5 2
2.5 3
VGE = 20V
15V
12V
10V
3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
50
VGE = 20V
25 15V
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com Fig. 4 Typical output characteristics
40
Conditions:
Tc = 125˚C,
35 Rg = 10 ohms,
Vcc = 900V
30
70
Conditions:
Tc = 125˚C,
IC = 100A,
60 Vcc = 900V
50
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25
20
15
10
5 Eon
Eoff
Erec
0
0 10 20 30 40 50 60 70 80 90 100
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
40
30
20
10
Eon
Eoff
Erec
0
8 10 12 14 16 18 20
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DIM100WHS17-A000.PDF ] |
Número de pieza | Descripción | Fabricantes |
DIM100WHS17-A000 | IGBT Power Module | Dynex Semiconductor |
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