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PDF DIM100PHM33-F000 Data sheet ( Hoja de datos )

Número de pieza DIM100PHM33-F000
Descripción IGBT Power Module
Fabricantes Dynex Semiconductor 
Logotipo Dynex Semiconductor Logotipo



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No Preview Available ! DIM100PHM33-F000 Hoja de datos, Descripción, Manual

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DIM100PHM33-F000
FEATURES
I Soft Punch Through Silicon
I 10µs Short Circuit Withstand
I Isolated MMC Base with AlN Substrates
I High Thermal Cycling Capability
DIM100PHM33-F000
Half Bridge IGBT Module
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
2.8V
IC
(max)
100A
IC(PK)
(max)
200A
* Measured at auxiliary terminals.
PDS5764-1.1 April 2004
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
1(E1/C2)
2(C1)
3(E2)
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-F000 is a half bridge 3300V sDoafttapSunhcehet4U.com
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
5(E1)
4(G1)
8(C1)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
DataShee
ORDERING INFORMATION
Order As:
DIM100PHM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100PHM33-F000 pdf
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DIM100PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
t Turn-off delay time
d(off)
tf Fall time
E
OFF
Turn-off energy loss
td(on) Turn-on delay time
tr Rise time
Qg Gate charge
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr Diode reverse current
EREC
Diode reverse recovery energy
et4U.com
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off) Turn-off delay time
tf Fall time
EOFF Turn-off energy loss
td(on) Turn-on delay time
t Rise time
r
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr Diode reverse current
E Diode reverse recovery energy
REC
Test Conditions
Min. Typ. Max. Units
IC = 100A
VGE = ±15V
V = 1800V
CE
RG(ON) = RG(OFF) = 33
Cge = 33nF
L ~ 100nH
- 1950 -
ns
- 170 - ns
- 110 - mJ
- 1180 -
ns
- 225 - ns
- 2.5 - µC
IC = 100A, VGE = ±15V, VCE = 1800V,
-
150
-
mJ
R
G(ON)
=
16.5,
C
ge
=
33nF,
L
~
100nH
IF = 100A, VR = 1800V,
dIF/dt = 800A/µs
DataSheet4U.com
- 40 - µC
- 75 - A
- 40 - mJ
DataShee
Test Conditions
Min. Typ. Max. Units
I = 100A
C
- 2200 -
ns
VGE = ±15V
- 190 - ns
VCE = 1800V
- 135 - mJ
RG(ON) = RG(OFF) = 33
- 1150 -
ns
Cge = 33nF, L ~ 100nH
- 280 - ns
IC = 100A, VGE = ±15V, VCE = 1800V,
-
200
-
mJ
RG(ON) = 16.5, Cge = 33nF, L ~ 100nH
IF = 100A, VR = 1800V,
dI /dt
F
=
800A/µs
- 65 - µC
- 85 - A
- 65 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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