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PDF M53233200CJ0-C Data sheet ( Hoja de datos )

Número de pieza M53233200CJ0-C
Descripción (M53233200CE0/CJ0-C) DRAM Module
Fabricantes Samsung Semiconductor 
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No Preview Available ! M53233200CJ0-C Hoja de datos, Descripción, Manual

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DRAM MODULE
M53233200CE0/CJ0-C
4Byte 32Mx32 SIMM
(16Mx4 base)
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Revision 0.0
June 1999
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M53233200CJ0-C pdf
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DRAM MODULE
M53233200CE0/CJ0-C
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +125
16
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC 4.5 5.0 5.5
VSS 0 0 0
VIH 2.4
- VCC*1
VIL -1.0*2
-
0.8
*1 : VCC+2.0V at pulse width20ns, which is measured at VCC.
*2 : -2.0V at pulse width20ns, whcih is measured at VSS.
Unit
V
V
V
V
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DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
Speed
M53233200CE0/CJ0
Min Max
Unit
ICC1
-50
-60
-
-
976 mA
896 mA
ICC2
ICC3
Dont care
-50
-60
Da- taSheet4U.com
-
-
32
976
896
mA
mA
mA
ICC4
ICC5
-50
-60
Dont care
-
-
-
896 mA
816 mA
16 mA
ICC6
-50
-60
-
-
976 mA
896 mA
II(L)
IO(L)
Dont care
-10
-10
10 uA
10 uA
VOH
VOL
Dont care
2.4
-
-V
0.4 V
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
ICC4 : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min)
ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
I(IL) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under test=0 V)
I(OL) : Output Leakage Current(Data Out is disabled, 0VVOUTVcc)
VOH : Output High Voltage Level (IOH = -5mA)
VOL : Output Low Voltage Level (IOL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.
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M53233200CJ0-C arduino
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DRAM MODULE
READ - MODIFY - WRITE CYCLE
M53233200CE0/CJ0-C
et4U.com
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VI/OH -
DQ
VI/OL -
tRAS
tRWC
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWL
tCWL
tWP
tOLZ
tCLZ
tCAC
tAA
tRAC
tRWD
tOEA
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tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Dont care
Undefined
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