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PDF M53230804BY0 Data sheet ( Hoja de datos )
| Número de pieza | M53230804BY0 | |
| Descripción | (M53230804BT0-C/BY0) DRAM Module | |
| Fabricantes | Samsung Semiconductor | |
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DRAM MODULE
M53230804BY0/BT0-C
4Byte 8Mx32 SIMM
PDpin(4Mx16 base)
DataSheet4U.com
Revision 0.1
June 1998
DataShee
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DRAM MODULE
M53230804BY0/BT0-C
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +125
4
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
et4U.com
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC 4.5 5.0 5.5
VSS 0 0 0
VIH 2.4
- VCC*1
VIL -1.0*2
-
0.8
V
V
V
V
*1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC.
*2 : -2.0V at pulse width≤20ns, which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
II(L)
IO(L)
VOH
VOL
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
M53230804BY0/BT0
Min
-
-
Da- taSheet4U.com
-
-
-
-
-
-
-
-10
-10
2.4
-
Max
244
224
8
244
224
224
204
4
244
224
10
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
ICC4 :Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min)
ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc)
VOH : Output High Voltage Level (IOH = -5mA)
VOL : Output Low Voltage Level (IOL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.
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DRAM MODULE
READ - MODIFY - WRITE CYCLE
M53230804BY0/BT0-C
et4U.com
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VI/OH -
DQ
VI/OL -
tRAS
tRWC
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWL
tCWL
tWP
tOLZ
tCLZ
tCAC
tAA
tRAC
tRWD
tOEA
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tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Don′t care
Undefined
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