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PDF 2SA2154 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2154 | |
| Descripción | General Purpose Amplifier Applications | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
2SA2154
General-Purpose Amplifier Applications
• High voltage and high current
: VCEO = −50 V, IC = −100 mA (max)
• Excellent hFE linearity
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• High hFE : hFE = 120~400
• Complementary to 2SC6026
• Lead (Pb) free
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−50 V
−50 V
−5 V
−100
mA
−30 mA
50 mW
DataSheet4U.com
150 °C
−55~150
°C
0.1±0.05
1.BASE
2.EMITTER
fSM 3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE (Note) VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
hFE Rank
Min Typ. Max Unit
⎯ ⎯ −0.1 µA
⎯ ⎯ −0.1 µA
120 ⎯ 400 ⎯
⎯ −0.18 −0.3
V
80 ⎯ ⎯ MHz
⎯ 1.6 ⎯ pF
8F
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1 2005-03-23
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA2154.PDF ] | |
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