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PDF 2SA2101 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2101 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SA2101
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60 V
−60 V
−6 V
−2 A
−4 A
DataSheet4U.com
15 W
2
150 °C
−55 to +150 °C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: A2101
DataShee
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VCE = −4 V, IC = − 0.2 A
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −2 A
IC = −2 A, IB = − 0.25 A
VCE = 10 V, IC = − 0.1 A, f = 10 MHz
IC = −1 A, Resistance loaded
IB1 = − 0.1 A, IB2 = 0.1 A
VCC = −50 V
−60 V
−100 µA
−100 µA
60
80 250
30
− 0.6 V
100 MHz
0.15 µs
0.35 µs
0.06 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Publication date: November 2002
DataSheet4 U .com
SJD00295AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA2101.PDF ] | |
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