DataSheet.es    


PDF 2SA2164 Data sheet ( Hoja de datos )

Número de pieza 2SA2164
Descripción Silicon PNP epitaxial planar type For high-frequency amplification
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SA2164 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! 2SA2164 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio fT
SSS-Mini type package, allowing downsizing of the equipment and 
automatic insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
100
125
55 to +125
Unit
V
V
V
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
Marking Symbol : E
SSSMini3-F1 Package
Electrical Characteristics Ta = 25°C±3°C
DataSheet4U.com
Parameter
Symbol
Conditions
Min Typ
Base-emitter voltage
VBE VCE = –10 V, IC = –1 mA
0.7
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Collector-emitter cut-off current (Base open)
ICEO VCE = –20 V, IB = 0
Emitter-base cut-off current (Collector open)
IEBO VEB = –5 V, IC = 0
Forward current transfer ratio
hFE VCB = –10 V, IE = 1 mA
70
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
0.1
Transition frequency
fT VCB = –10 V, IE = 1 mA, f = 200 MHz 150 300
Noise figure
NF VCB = –10 V, IE = 1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCB = –10 V, IE = 1 mA, f = 2 MHz
22
Common-emitter reverse transfer capacitance Cre VCB = –10 V, IE = 1 mA, f = 10.7 MHz
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
10
220
Unit
V
µA
µA
µA
V
MHz
dB
pF
DataShee
DataSheet4U.com
Publication date : December 2004
DataSheet4 U .com
SJC00330AED
1

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet 2SA2164.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SA2162Silicon PNP Epitaxial TransistorPanasonic Semiconductor
Panasonic Semiconductor
2SA2164Silicon PNP epitaxial planar type For high-frequency amplificationPanasonic Semiconductor
Panasonic Semiconductor
2SA2166SILICON PNP EPITAXIAL TYPEIsahaya Electronics Corporation
Isahaya Electronics Corporation
2SA2167SILICON PNP EPITAXIAL TYPEIsahaya Electronics Corporation
Isahaya Electronics Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar