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PDF 2SA2168 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2168 | |
| Descripción | High Voltage Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN8357
2SA2168
2SA2168
PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
• Adoption of MBIT process.
• High breakdown voltage and large current capacity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
DataSheet4U.com
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
Storage Time
tstg
Fall Time
tf
* ; The 2SA2168 is classified by 100mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
VCB=--120V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--5V, IC=--10mA
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
IC=--500mA, IB=--50mA
IC=--500mA, IB=--50mA
IC=--10µA, IE=0A
IC=--1mA, RBE=∞
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
--180
--160
--6
--1.5
--2.5
1.5
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Ratings
min typ
140*
80
--180
--160
--6
120
22
--200
--0.85
40
0.7
40
max
--1
--1
400*
--500
--1.2
Unit
µA
µA
MHz
pF
mV
V
V
V
V
ns
µs
ns
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataShee
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005CB MS IM TB-00001469 No.8357-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA2168.PDF ] | |
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