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PDF C3998 Data sheet ( Hoja de datos )
| Número de pieza | C3998 | |
| Descripción | NPN Transistor - 2SC3998 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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 1. - NPN Transistor - 2SC3998  Hay una vista previa y un enlace de descarga de C3998 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Ordering number:ENN2732
NPN Triple Diffused Planar Silicon Transistor
2SC3998
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (adoption of HVP process).
www.DataSheet4U·.cAomdoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC3998]
20.0 3.3
5.0
2.0
3.4
1.2
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
VCE=1500V
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=20A
IC=20A, IB=5A
IC=20A, IB=5A
IC=12A, IB1=2.4A, IB2=–4.8A
IC=12A, IB1=2.4A, IB2=–4.8A
1 23
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
1500
800
6
25
50
250
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
800
8
4
max
1.0
1.0
10
30
8
5
1.5
3.0
0.2
Unit
mA
V
mA
µA
V
V
µs
µs
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82903TN (KT)/D2598HA (KT)/N158MO, TS No.2732–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C3998.PDF ] | |
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