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PDF UPD29F064115-X Data sheet ( Hoja de datos )
| Número de pieza | UPD29F064115-X | |
| Descripción | 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD29F064115-X
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY
4M-WORD BY 16-BIT (WORD MODE)
PAGE MODE
Description
The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire
chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in
word units. µPD29F064115-X can be read high speed with page mode.
The µPD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided
into four banks. While sectors in any bank are being erased or programmed, data can be read from the other three
banks thanks to the simultaneous execution architecture. The banks are 8M bits, 24M bits, 24M bits and 8M bits.
Input /output voltage is supplied to 2.7 to 3.3 V.
Because the µPD29F064115-X enables the boot sector to be erased, it is ideal for storing a boot program. In
addition, program code that controls the flash memory can be also stored, and the program code can be programmed
or erased without the need to load it into RAM. 16 small sectors for storing parameters are provided, each of which
can be erased in 4K words units.
Once a program or erase command sequence has been executed, an automatic program or automatic erase
function internally executes program or erase and verification automatically. The programming time is about 0.5
seconds per sector. The erase time is less than 1 second per sector.
Because the µPD29F064115-X can be electrically erased or programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory hDaastabSeehneeints4tUal.lecdomin a system, making it suitable for a wide range of
applications.
This flash memory is packed in 48-pin PLASTIC TSOP (I), 63-pin TAPE FBGA and 85-pin TAPE FBGA.
DataShee
Features
• Four bank organization enabling simultaneous execution of program / erase and read
• High-speed read with page mode
• Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)
• Memory organization : 4,194,304 words × 16 bits
• Sector organization : 142 sectors (4K words × 16 sectors, 32K words × 126 sectors)
The boot sector is located at the highest address (sector) and the lowest address (sector)
• 3-state output
• Automatic program
• Program suspend / resume
• Unlock bypass program
• Automatic erase
• Chip erase
• Sector erase (sectors can be combined freely)
• Erase suspend / resume
• Program / Erase completion detection
• Detection through data polling and toggle bits
• Detection through RY (/BY) pin
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M16062EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
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The mark # shows major revised points.
©
2002
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µPD29F064115-X
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85-pin TAPE FBGA (11 × 8)
[ µPD29F064115F9-DB80X-CD5 ]
[ µPD29F064115F9-DB85X-CD5 ]
[ µPD29F064115F9-EB85X-CD5 ]
[ µPD29F064115F9-EB90X-CD5 ]
A
10 NC
9 NC
8
7
6
5
4
3
2 NC
1 NC
Top View
Bottom View
Top View
10 Bottom View
9
8
7
6
5
4
3
2
1
ABCDE FGH J K LM
ML K J HGF EDCBA
ABCDE FGH
Top View H G F E D C B A
BCDE FGH J K
Top View
NC NC NC
ABCDE FGH
NC A15 A21 NC A16 NC GND
8
NC A11
A15 NC NC A16 CIOf VSS
A12 A13 A14 NC I/O15 I/O7 I/O14
7
A11 A12 A13 A14
SA I/O15, A-1 I/O7 I/O14
A8 A19 A9 A10 I/O6 I/O13 I/O12 I/O5
6 A8 A19 A9
NC /WE NC A20
A10 I/O6 I/O13 I/O12 I/O5
I/O4
NC VCCQ
5 /WE CE2s A20
NC /WP(ACC) /RESET RY(/BY)
I/O4 VCCs CIOs
I/O3
VCC I/O11
4 /WP(ACC) /RESET RY(/BY)
I/O3
VCCf I/O11
NC NC A18 A17 I/O1 I/O9 I/O10 I/O2
3 /LB /UB A18 A17 I/O1 I/O9 I/O10 I/O2
NC A7 A6 A5 A4 GND /OE I/O0 I/O8
2
NC
A7
A6
A3
DA2Aa5taShA1eA4et4UA.0VcSoS m
/OE
/CE
I/O0
NC
I/O8
1
NC NC
A3 A2 A1 A0 /CEf /CE1s
NC NC
L
NC
NC
NC
NC
NC
NC
NC
NC
M
NC
NC
NC
NC
A0 to A21 : Address inputs
I/O0 to I/O15 : Data Inputs / Outputs
/CE : Chip Enable
/WE : Write Enable
/OE : Output Enable
/RESET
: Hardware reset input
RY (/BY) : Ready (Busy) output
/WP (ACC) : Write Protect (Accelerated) input
VCC : Supply Voltage
VCCQ
: Input / Output Supply Voltage
GND
NC Note
: Ground
: No Connection
Note Some signals can be applied because this pin is not connected to the inside of the chip.
Remark Refer to Package Drawings for the index mark.
INPUT / OUTPUT PIN FUNCTION
Refer to PAGE MODE FLASH MEMORY, BURST MODE FLASH MEMORY Information (M15451E).
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Data Sheet M16062EJ2V0DS
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Sector Group Address Table
(1/2)
Sector group A21 A20 A19 A18 A17 A16 A15 A14 A13 A12
Size
Sector
SGA0
SGA1
SGA2
SGA3
SGA4
SGA5
SGA6
SGA7
SGA8
SGA9
SGA10
SGA11
SGA12
SGA13
SGA14
SGA15
SGA16
SGA17
SGA18
SGA19
SGA20
SGA21
SGA22
SGA23
0 0 0 0 0 0 0 0 0 0 4K words (1 Sector)
SA0
0 0 0 0 0 0 0 0 0 1 4K words (1 Sector)
SA1
0 0 0 0 0 0 0 0 1 0 4K words (1 Sector)
SA2
0 0 0 0 0 0 0 0 1 1 4K words (1 Sector)
SA3
0 0 0 0 0 0 0 1 0 0 4K words (1 Sector)
SA4
0 0 0 0 0 0 0 1 0 1 4K words (1 Sector)
SA5
0 0 0 0 0 0 0 1 1 0 4K words (1 Sector)
SA6
0 0 0 0 0 0 0 1 1 1 4K words (1 Sector)
SA7
0 0 0 0 0 0 1 × × × 96K words (3 Sectors) SA8 to SA10
10
11
0 0 0 0 1 × × × × × 128K words (4 Sectors) SA11 to SA14
0 0 0 1 0 × × × × × 128K words (4 Sectors) SA15 to SA18
0 0 0 1 1 × × × × × 128K words (4 Sectors) SA19 to SA22
0 0 1 0 0 × × × × × 128K words (4 Sectors) SA23 to SA26
0 0 1 0 1 × × × × × 128K words (4 Sectors) SA27 to SA30
0 0 1 1 0 × × × × × 128K words (4 Sectors) SA31 to SA34
0 0 1 1 1 × × × × × 128K words (4 Sectors) SA35 to SA38
0 1 0 0 0 × × × × × 128K words (4 Sectors) SA39 to SA42
0 1 0 0 1 × × × × × 128K words (4 Sectors) SA43 to SA46
0 1 0 1 0 D× ataS×heet4×U.com× × 128K words (4 Sectors) SA47 to SA50
0 1 0 1 1 × × × × × 128K words (4 Sectors) SA51 to SA54
0 1 1 0 0 × × × × × 128K words (4 Sectors) SA55 to SA58
0 1 1 0 1 × × × × × 128K words (4 Sectors) SA59 to SA62
0 1 1 1 0 × × × × × 128K words (4 Sectors) SA63 to SA66
0 1 1 1 1 × × × × × 128K words (4 Sectors) SA67 to SA70
Remark × : VIH or VIL
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Data Sheet M16062EJ2V0DS
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| PDF Descargar | [ Datasheet UPD29F064115-X.PDF ] | |
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