|
|
PDF TC59SM816CFTI Data sheet ( Hoja de datos )
| Número de pieza | TC59SM816CFTI | |
| Descripción | SDRAM | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TC59SM816CFTI (archivo pdf) en la parte inferior de esta página. Total 48 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4
banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer
data up to 133M words per second. These devices are controlled by commands setting. Each bank are kept active so
that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh
are easy to use. By having a programmable Mode Register, the system can choose the most suitable modes which
will maximize its performance. These devices are ideal for main memory in applications such as work-stations.
FEATURES
PARAMETER
TC59SM816
-75 -80
tCK Clock Cycle Time (min)
7.5 ns
8 ns
tRAS Active to Precharge Command Period (min)
45 ns
48 ns
tAC Access Time from CLK (max)
5.4 ns
6 ns
tRC Ref/Active to Ref/Active Command Period (min)
65 ns
68 ns
ICC1 Operation Current (max) (Single bank)
75 mA
70 mA
ICC4 Burst Operation Current (max)
95 mA
90 mA
ICC6 Self-Refresh Current (max)
3 mA
3 mA
• Single power supply of 3.3 V ± 0.3 V
• Up to 133 MHz clock frequency
• Synchronous operations: All signals referenced to the positive edges of clock
• Architecture:
Pipeline
• Organization
TC59SM816CFTI:
4,194,304 words × 4DbaatnakSsh×ee16t4bUit.scom
• Programmable Mode register
• Auto Refresh and Self Refresh
• Burst Length:
1, 2, 4, 8, Full page
• CAS Latency:
2, 3
• Single Write Mode
• Burst Stop Function
• Byte Data Controlled by LDQM, UDQM (TC59SM816)
• 8K Refresh cycles/64 ms
• Interface:
LVTTL
• Package
TC59SM816CFTI:
TSOPII54-P-400-0.80B
DataShee
000707EBA2
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
DataSheet4U.com
2001-06-18 1/48
DataSheet4 U .com
1 page  
www.DataSheet4U.com
TC59SM816CFTI-75,-80
DC CHARACTERISTICS (VCC = 3.3 V ± 0.3 V, Ta = -40°~85°C)
PARAMETER
OPERATING CURRENT
tCK = min, tRC = min
1 bank operation
Active Precharge command cycling
without burst operation
SYMBOL
-75
MIN MAX
-80
MIN MAX
UNITS NOTES
ICC1
75 70
3
STANDBY CURRENT
tCK = min, CS = VIH,
VIH/L = VIH(min) / VIL(max),
Bank: Inactive state
CKE = VIH
ICC2
CKE = VIL
(Power Down mode)
ICC2P
35 30
11
3
3
et4U.com
STANDBY CURRENT
CLK = VIL, CS = VIH,
VIH/L = VIH(min) / VIL(max),
Bank: Inactive state
CKE = VIH
ICC2S
CKE = VIL
(Power Down mode)
ICC2PS
NO OPERATING CURRENT
tCK = min, CS = VIH(min),
Bank: Active state (4 banks)
CKE = VIH
ICC3
CKE = VIL
(Power Down mode)
ICC3P
BURST OPERATING CURRENT
tCK = min
Read/Write command cycling
ICC4
AUTO REFRESH CURRENT
tCK = min, tRC = min
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh mode
CKE = 0.2 V
ICC5
DataSheet4U.com
Standard Products
(CFTI)
ICC6
10 10
11
55 50
10 10
95 90
160 150
33
mA
3, 4
3
DataShee
PARAMETER
INPUT LEAKAGE CURRENT
(0 V ≤ VIN ≤ VCC, all other pins not under test = 0 V)
OUTPUT LEAKAGE CURRENT
(Output disable, 0 V ≤ VOUT ≤ VCCQ)
LVTTL OUTPUT H LEVEL VOLTAGE (IOUT = −2 mA)
LVTTL OUTPUT L LEVEL VOLTAGE (IOUT = 2 mA)
SYMBOL
II(L)
IO(L)
VOH
VOL
MIN
−5
−5
2.4
MAX
5
5
0.4
UNITS NOTES
µA
µA
V
V
DataSheet4U.com
DataSheet4 U .com
2001-06-18 5/48
5 Page 
www.DataSheet4U.com
Control Timing of Input Data (TC59SM816)
TC59SM816CFTI-75,-80
et4U.com
(Word Mask)
CLK
LDQM
UDQM
DQ0~DQ7
DQ8~DQ15
(Clock Mask)
CLK
CKE
DQ0~DQ7
DQ8~DQ15
tCMH
tCMS tCMH
tCMS
tCMH
tCMS tCMH
tCMS
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tCKH tCKS DtCaKHtaSheettC4KUS .com
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
tDS tDH
Input
data valid
DataShee
DataSheet4U.com
DataSheet4 U .com
2001-06-18 11/48
11 Page | ||
| Páginas | Total 48 Páginas | |
| PDF Descargar | [ Datasheet TC59SM816CFTI.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TC59SM816CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM | Toshiba |
| TC59SM816CFTI | SDRAM | Toshiba |
| TC59SM816CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |