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PDF IRGPS40B120UDP Data sheet ( Hoja de datos )
| Número de pieza | IRGPS40B120UDP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 95967
IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
C VCES = 1200V
• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
G
E
N-channel
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
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Super-247™
Max.
VCES
Collector-to-Emitter Voltage
1200
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
80
40
160
160
80
40
160
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
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Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.83
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
1
11/19/04
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IRGPS40B120UDP
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 20A
ICE = 40A
ICE = 80A
10 15
VGE (V)
20
20
18
16
14
12
10
8
6
4
2
5
ICE = 20A
ICE = 40A
ICE = 80A
10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
DataShee
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 20A
ICE = 40A
ICE = 80A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 125°C
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500
450 TJ = 25°C
400 TJ = 125°C
350
300
250
200
150
100 TJ = 125°C
50
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
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IRGPS40B120UDP
Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125C using Fig. CT.4
1100
1000
900
800
700
600
500
400
300
200
100
0
-100
-0.20
0.00
90% ICE
tf
5% VCE
5% ICE
Eoff Loss
0.20 0.40
Time(µs)
0.60
50 900
800
40
700
600
30
500
20 400
300
10 200
100
0
0
-100
-10
0.8D0ataSheet4U.com
4.10
4.20
90
80
70
60
TEST CURRENT
50
90% test current
10% test current
5% V CE
40
30
20
10
0
-10
4.30 4.40 4.50 4.60
Time (µs)
Fig. WF.3 - Typ. Diode Recovery
W avef orm
@Tj=125°C using Fig. CT.4
300
50
200
QRR
100
tRR
0
40
30
20
-100 10
-200 0
-300
-400
-500
Peak
IRR
-10
10%
Peak -20
IRR
-30
-600 -40
-700 -50
-800
-0.25
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0.25 0.75
time (µS)
-60
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
1000
500
900
VCE
800
450
400
700 ICE 350
600 300
500 250
400 200
300 150
200 100
100 50
0
-5.00
0.00 5.00 10.00
time (µS)
0
15.00
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGPS40B120UDP.PDF ] | |
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