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PDF DS1225AB Data sheet ( Hoja de datos )

Número de pieza DS1225AB
Descripción 64k Nonvolatile SRAM
Fabricantes Dallas 
Logotipo Dallas Logotipo



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DS1225AB/AD
64k Nonvolatile SRAM
www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% VCC operating range (DS1225AD)
Optional ±5% VCC operating range
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
28-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A12
DQ0-DQ7
- Address Inputs
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE
VCC
GND
NC
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
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DS1225AB pdf
AC ELECTRICAL CHARACTERISTICS (cont’d)
DS1225AB- 150
PARAMETER
SYMBOL DS1225AD- 150
MIN MAX
Read Cycle Time
Access Time
OE to Output Valid
tRC 150
tACC 150
tOE 70
CE to Output Valid
tCO 150
OE or CE to Output Active
tCOE
5
Output High Z from Deselection
Output Hold from Address
Change
tOD
tOH
35
5
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
tWC 150
tWP 100
tAW 0
tWR1
0
tWR2
10
tODW
35
Output Active from WE
tOEW
5
Data Setup Time
Data Hold Time
tDS 60
tDH1
0
tDH2 10
DS1220AB-200
DS1220AD-200
MIN MAX
200
200
100
200
5
35
5
200
100
0
0
10
35
5
80
0
10
DS1225AB/AD
UNITS NOTES
ns
ns
ns
ns
ns 5
ns 5
ns
ns
ns 3
ns
ns 12
ns 13
ns 5
ns 5
ns 4
ns 12
ns 13
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