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PDF CDD2395 Data sheet ( Hoja de datos )
| Número de pieza | CDD2395 | |
| Descripción | NPN Silicon Epitaxial Power Transistor | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CDD2395 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL POWER TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CDD2395
(9AW)
TO-220
MARKING : AS BELOW
Designed For Relay drive and DC-DC Converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter- Base Voltage
VEBO
Collector Current
IC
Peak (pulse)
ICP*
Power Dissipation @ Ta=25 deg C PC
Power Dissipation @ Tc=25 deg C
Junction Temperature
Tj
Storage Temperature Range
Tstg
*Single Pulse Pw=100ms
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ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=50uA, IE=0
Emitter Base Voltage
VEBO
IE=50uA,IC=0
Collector Cut off Current
ICBO
VCB=60V, IE=0
Emitter Cut off Current
IEBO
VEB=4V,IC=0
Collector Emitter Saturation Voltage VCE(Sat) IC=2A,IB=0.2A
Base Emitter Saturation Voltage
VBE(Sat) IC=2A, IB=0.2A
DC Current Gain
hFE IC=0.5A, VCE=3V
Dynamic Characteristics
Transition Frequency
ft VCE=5V,IC=0.5A,
f=30MHz
Collector Output Capacitance
Cob VCB=10V, IE=0
f=1MHz
VALUE
60
50
5.0
3.0
4.5
2.0
30
150
-55 to +150
MIN
50
60
5.0
-
-
-
-
60
-
-
TYP
-
-
-
-
-
-
-
-
100
35
hFE CLASSIFICATION:-
MARKING :
D : 60 -120;
CDD
2395
D
E : 100 -200;
CDD
2395
E
F: 160-320;
CDD
2395
F
MAX
-
-
-
1.0
1.0
1.0
1.5
320
-
-
UNIT
V
V
V
A
A
W
W
deg C
deg C
DataShee
UNIT
V
V
V
uA
uA
V
V
MHz
pF
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Continental Device India Limited
DataSheet4 U .com
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CDD2395.PDF ] | |
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