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PDF IRG4PH30K Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH30K | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD -91580A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
IRG4PH30K
Short Circuit Rated
UltraFast IGBT
C
VCES = 1200V
G
E
n-channel
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
• This part replaces the IRGPH30K and IRGDPaHta3S0Mheet4U.com
devices
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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Max.
1200
20
10
40
40
10
±20
121
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
V
A
µs
V
mJ
W
°C
Units
°C/W
g (oz)
1
2/7/2000
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IRG4PH30K
1200
1000
800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
600
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
20
VCC = 400V
I C = 10A
15
10
5
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage DataSheet4U.com
Gate-to-Emitter Voltage
3.0 VCC = 960V
VGE = 15V
TJ = 25 °C
IC = 10A
2.5
2.0
1.5
100 RG = O23hΩm
VGE = 15V
VCC = 960V
10
1
IC = 20 A
IC = 10 A
IC = 5 A
1.0
0
10 20 30 40
RRGG , ,GGaateteRReseisstiasntacnec(eΩ(O) hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH30K.PDF ] | |
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