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Número de pieza | AH215 | |
Descripción | 1 Watt High Linearity HBT Amplifier | |
Fabricantes | ETC | |
Logotipo | ||
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AH215
1 Watt, High Linearity HBT Amplifier
The Communications Edge TM
Product Information
Product Features
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5 V)
• SOIC-8 SMT Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
18
27
36
45
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications (1)
Typical Performance (4)
Parameters
Units Min Typ Max Parameters
Units
Typical
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3)
Device Voltage, Vcc
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
mA
V
10
+29
+43.8
400
2140
Frequency
MHz 900 1960 2140
11 S21 – Gain
dB 18 12 11
18 DataSheet4US1.1com
8 S22
dB -13 -11 -18
dB -7 -10 -8
+31.5
Output P1dB
dBm +31 +32 +31.5
+45 Output IP3
dBm +46 +46 +45
6.3 IS-95A Channel Power dBm +25.5 +25.5
@ -45 dBc ACPR
+26 W-CDMA Channel Power dBm
+23
@ -45 dBc ACPR
+23 Noise Figure dB 7.0 5.5 6.2
450 500
Supply Bias
+5 V @ 450 mA
5 4. Typical parameters reflect performance in a tuned application circuit at+25° C.
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz in a
tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
DataShee
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Operating Case Temperature
-40 to +85 °C
Storage Temperature
RF Input Power (continuous)
-65 to +150 °C
+26 dBm
Device Voltage
+8 V
Device Current
900 mA
DataSheet4UD.ecvoicme Power
5W
Operation of this device above any of these parameters may cause permanent damage.
Part No.
AH215-S8
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
Description
1 Watt, High Linearity InGaP HBT Amplifier
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com
DataSheet4U.com
DataSheet4 U .com
July 2004
1 page www.DataSheet4U.com
AH215
1 Watt, High Gain HBT Amplifier
The Communications Edge TM
Product Information
2140 MHz Application Circuit (AH215-S8PCB2140)
Typical RF Performance at 25°C
Frequency
2140 MHz
S21 – Gain
11 dB
S11 – Input Return Loss
-18 dB
S22 – Output Return Loss
-8.0 dB
Output P1dB
+31.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
+45 dBm
+23 dBm
6.2 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
et4U.com
S21 vs. Frequency
15
12
9
6 +25°C
+85°C
3
-40°C
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 vs. Frequency
-10
-14
-18
-22
-26
-30
2110
+25°C
+85°C
Data-4S0°Cheet4U.com
2120 2130 2140 2150 2160
Frequency (MHz)
2170
S22 vs. Frequency
0
-5
-10
+25°C
-15 +85°C
-40°C
-20
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
Noise Figure vs. Frequency
9
8
7
6
5
4
+25°C
3
2 +85°C
1 -40°C
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 vs. Temperature
freq. = 2140, 2141 MHz, +15 dBm / tone
50
47
44
41
38
35
-40
DataSheet4U.com
-15 10 35 60
Temperature (°C )
85
P1 dB vs. Frequency
34
32
30
+25°C
28
+85°C
26 -40°C
24
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +15 dBm / tone
50
47
44
41
38
35
2110
2120 2130 2140 2150 2160
Frequency (MHz)
2170
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz
-40
-45
-50
+25°C
-55
+85°C
-60 -40°C
-65
19
50
47
44
41
38
20 21 22 23
Output Channel Power (dBm)
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
24
35
10 12 14 16 18 20 22
Output Power (dBm)
DataShee
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: [email protected] • Web site: www.wj.com
DataSheet4U.com
DataSheet4 U .com
July 2004
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AH215.PDF ] |
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