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PDF D2012 Data sheet ( Hoja de datos )
| Número de pieza | D2012 | |
| Descripción | Si NPN Transistor | |
| Fabricantes | Wuxi Youda Electronics | |
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 1. 60V, NPN Transistor - Toshiba  Hay una vista previa y un enlace de descarga de D2012 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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YOUDA TRANSISTOR
D2012
Si NPN TRANSISTOR D2012
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BVCBO= 60V
*Collector current up to 3A
*High hFE linearity
PIN CONFIGURATIONS
PIN SYMBOL
1 Emitter
2 Collector
3 Base
ABSOLUTE MAXIMUM RATINGS (Tamb=25 )
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BVCBO
BVCEO
BVEBO
Collector Dissipation
Tcase=25
Tamb=25
Collector Current
DC
Pulse
Base Current
Junction Temperature
PCM
ICM
Icp
IB
Tj
Storage Temperature
Tstg
VALUE
60
50
7
30
1.5
3
7
0.6
+150
-55 +150
UNIT
V
V
V
W
W
A
A
A
ELECTRICAL CHARACTERISTICS (Tamb=25 ,all voltage referenced to GND Unless otherwise specified)
PARAMETER
SYMDaBtaOSLheetT4EUS.cTomCONDITIONS MIN TYP MAX UNIT DataShee
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VcB=50V, IE=0
VEB=5V, IC=0
VcE=5V, IC=20mA
VcE=5V, IC=0.5A
Ic=3A, IB=0.3A
Ic=2A, IB=0.2A
VcE=5V, IC=0.1A
VcB=10V,
IE=0,f=1MHz
100 nA
100 nA
30 200
100 400
0.3 0.5
V
1.0 2.0
V
5 MHz
80 pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
100 200
P
160 320
E
200 400
WuXi YouDa Electronics Co., Ltd
Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE Tel 86-755-83740369 13823533350 Fax 86-755-83741418
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D2012.PDF ] | |
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