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PDF 2N7368 Data sheet ( Hoja de datos )
| Número de pieza | 2N7368 | |
| Descripción | NPN HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/622
Devices
2N7368
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol Value
Collector-Emitter Voltage
VCEO
80
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
7.0
Base Current
IB 4.0
Collector Current
Total Power Dissipation
DataSheIeCt4U.com 10
@ TC = 250C (1)
PT 115
Operating & Storage Junction Temperature Range
TJ, Tstg -65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.657 W/0C for TC > 250C
RθJC
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.2 Adc
Collector-Emitter Cutoff Current
VCEO(sus)
VCE = 70 Vdc
Collector-Emitter Cutoff Current
ICES
VCE = 80 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
ICEX
VEB = 7.0 Vdc
IEBO
TO-254*
*See appendix A for
package outline
Min. Max.
Unit
80 Vdc
1.0 mAdc
1.0 mAdc
1.0 mAdc
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| 2N7368 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
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