|
|
PDF TIM1414-18L Data sheet ( Hoja de datos )
| Número de pieza | TIM1414-18L | |
| Descripción | Microwave Power GaAs FET | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TIM1414-18L (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1414-18L
PR E L I M I N A R Y
FEATURES
n HIGH POWER
n BROAD BAND INTERNALLY MATCHED
P1dB=42.5dBm at 14.0GHz to 14.5GHz
n HIGH GAIN
n HERMETICALLY SEALED PACKAGE
G1dB=6.0dB at 14.0GHz to 14.5GHz
n LOW INTERMODULATION DISTORTION
IM3(Min.)=−30dBc at Po=36dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION
UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P1dB
VDS= 9V
dBm 42.0 42.5
Power Gain at 1dB
Compression Point
G1dB IDSQ=4.4A
f = 14.0 – 14.5GHz
dB 5.0 6.0
Drain Current
IDS1
A 5.5 6.0
Power Added Efficiency
ηadd
% 28
3rd Order Intermodulation
Distortion
IM3 Two Tone Test
DataShePeto4=U.3c6o.m0dBm
dBc -25
Drain Current
IDS2
(Single Carrier Level)
A
5.5 6.0
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C 100
ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITION
gm VDS= 3V
IDS= 4.8A
VGSoff VDS= 3V
IDS= 145mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -145µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS 6000
V -0.7 -1.6 -2.3
A 10.0 11.5
V -5
°C/W 1.8 2.3
DataShee
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
DataSheet4U.com
May 2002
DataSheet4 U .com
DataSheet4U.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TIM1414-18L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TIM1414-18L | Microwave Power GaAs FET | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |