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PDF IRFU430B Data sheet ( Hoja de datos )

Número de pieza IRFU430B
Descripción 500V N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! IRFU430B Hoja de datos, Descripción, Manual

www.DataSheet4U.com
November 2001
IRFR430B / IRFU430B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 3.5A, 500V, RDS(on) = 1.5@VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
IRFR Series
I-PAK
GDS
IRFU Series
DataSheet4U.com
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
◀▲
!
S
IRFR430B / IRFU430B
500
3.5
2.2
14
± 30
270
3.5
4.8
5.5
2.5
48
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 2.6 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B, November 2001
DataSheet4 U .com
DataSheet4U.com
DataShee

1 page




IRFU430B pdf
www.DataSheet4U.com
Gate Charge Test Circuit & Waveform
et4U.com
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL VDS
DataVSDhD eet4U.com
90%
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
DataShee
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
Rev. B, November 2001
DataSheet4U.com

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