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PDF IRFR420A Data sheet ( Hoja de datos )

Número de pieza IRFR420A
Descripción SMPS MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFR420A Hoja de datos, Descripción, Manual

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PD - 94355
SMPS MOSFET
IRFR420A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
IRFU420A
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max ID
3.0
3.3A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR420A
I-Pak
IRFU420A
Absolute Maximum Ratings
Parameter DataSheet4U.com
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
3.3
2.1
10
83
0.67
± 30
3.4
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
140
2.5
5.0
Typ.
–––
0.50
–––
Max.
1.5
–––
62
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Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Units
°C/W
1
12/10/01
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IRFR420A pdf
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IRFR420A/IRFU420A
5.0
VDS
RD
VGS D.U.T.
4.0 RG +-VDD
3.0 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0 VDS
90%
0.0
25 50 75 100 125 150
TC , Case Temperature
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
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td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
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1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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