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PDF IRFU4105 Data sheet ( Hoja de datos )

Número de pieza IRFU4105
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFU4105 Hoja de datos, Descripción, Manual

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l Ultra Low On-Resistance
l Surface Mount (IRFR4105)
l Straight Lead (IRFU4105)
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
G
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipatioDnalteavSehlseet4U.com
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.045
ID = 27A…
S
D-PAK
T O -252 AA
I-P A K
T O -25 1AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚‡
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Max.
27…
19
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
1
5/11/98
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IRFU4105 pdf
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et4U.com
IRFR/U4105
30
LIMITED BY PACKAGE
25
20
15
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
10 Fig 10a. Switching Time Test Circuit
5 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
Fig 9. Maximum Drain Current Vs.
VGS
Case Temperature
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td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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