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PDF IRFU410 Data sheet ( Hoja de datos )

Número de pieza IRFU410
Descripción N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
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No Preview Available ! IRFU410 Hoja de datos, Descripción, Manual

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Data Sheet
IRFR410, IRFU410
July 1999 File Number 3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17445.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU410
TO-251AA
IFU410
IRFR410
TO-252AA
IFR410
NOTE: When ordering, use the entire part number.
Features
• 1.5A, 500V
• rDS(ON) = 7.000
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
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S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
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4-401
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRFU410 pdf
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IRFR410, IRFU410
Typical Performance Curves Unless Otherwise Specified (Continued)
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 30V
1
25oC
150oC
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 1.5A, VGS = 10V
2
1
0.1
3
45 6 7
VGS, GATE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
8
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
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300
250
200
150
100
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 0V
1
150oC
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25oC
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50 COSS
CRSS
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1
0.4
0.5 0.6 0.7 0.8 0.9
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.0
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 1.5A
18
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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