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PDF KMM366S823DTF Data sheet ( Hoja de datos )
| Número de pieza | KMM366S823DTF | |
| Descripción | Unbuffered DIMM | |
| Fabricantes | Samsung Semiconductor | |
| Logotipo |  |
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KMM366S823DTF
PC66 Unbuffered DIMM
Revision History
Revision 0.0(July 7, 1999)
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
Before
IIL Input leakage current (inputs)
IIL Input leakage current (I/O pins)
ILI
IOL
Output open @ DC characteristic table
Io
After
Input leakage current
Output open @ DC characteristic table
• Test Condition in DC CHARACTERISTIC Change Notice
Symbol
Before
After
ICC2P , ICC3P
CKE ≤ VIL(max), tCC = 15ns
CKE ≤ VIL(max), tCC = 10ns
ICC2N , ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC4
2 Banks activated
4 Banks activated
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
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REV. 0.0 July 1999
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KMM366S823DTF
PC66 Unbuffered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD 8
Short circuit current
IOS 50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
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DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max Unit
Supply voltage
VDD 3.0 3.3 3.6
V
Input high voltage
VIH
2.0
3.0 VDDQ+0.3
V
Input low voltage
VIL -0.3 0 0.8 V
Output high voltage
VOH
2.4
-
-V
Output low voltage
VOL -
- 0.4 V
Input leakage current
ILI -10
-
10 uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltageDdautraatSiohneise≤t43Uns.c. om
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
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CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0, CLK1)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT
Min
25
25
25
15
15
8
9
MAXIMUM TRACE LENGTHS
Signal
A0 ~ A11
BA0 ~ BA1
RAS
CAS
WE
Max lengths
8.0
8.0
8.0
8.0
8.0
Unit
Inches
Inches
Inches
Inches
Inches
Signal
CKE0
CS0, CS2
DQM0 ~ DQM7
DQ0 ~ DQ63
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Max
45
45
45
21
25
12
12
Unit
pF
pF
pF
pF
pF
pF
pF
Max lengths
5.5
4.0
3.0
2.0
Unit
Inches
Inches
Inches
Inches
REV. 0.0 July 1999
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet KMM366S823DTF.PDF ] | |
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