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PDF K2485 Data sheet ( Hoja de datos )
| Número de pieza | K2485 | |
| Descripción | MOSFET ( Transistor ) - 2SK2485 | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2485 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2485
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2485 is N-Channel MOS Field Effect Transistor designed
www.DataSheet4U.comfor high voltage switching applications.
FEATURES
• Low On-Resistance
RDS (on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A)
• Low Ciss Ciss = 1 200 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±6.0
A
Drain Current (pulse)*
ID (pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 6.0 A
Single Avalanche Energy**
EAS 42.3 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. D10279EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
www.DataSheet4U.com
1 VGS = 10 V
ID = 3 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100 Coss
10
0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SK2485
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
0.1
0
VGS = 10 V
VGS = 0 V
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
tr
tf
td(off)
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 6 A
14
12
VDD = 450 V
10 300 V
150 V
8
6
4
2
0
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2485.PDF ] | |
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