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PDF 2N6400 Data sheet ( Hoja de datos )

Número de pieza 2N6400
Descripción (2N6400 - 2N6405) Silicon Controlled Rectifiers
Fabricantes Motorola Semiconductor 
Logotipo Motorola Semiconductor Logotipo



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No Preview Available ! 2N6400 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half–wave silicon gate–controlled,
solid–state devices are needed.
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Order this document
by 2N6400/D
2N6400
thru
2N6405
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-07
(TO-220AB)
STYLE 3
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Voltage(1)
(Gate Open, TJ = 25 to 125°C)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
Symbol
VDRM, VRRM
Value
50
100
200
400
600
800
Unit
Volts
RMS On–State Current (TC = 90°C)
Average On–State Current
Peak Non-Repetitive Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
Amps
Amps
Amps
A2s
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amps
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.5 °C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Devices listed in bold, italic are Motorola preferred devices. Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1998
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2N6400 pdf
PACKAGE DIMENSIONS
2N6400 thru 2N6405
BF
Q
H
Z
4
123
A
K
L
V
G
N
D
T
U
–T–
SEATING
PLANE
C
S
R
J
CASE 221A–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.014 0.022
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.36 0.55
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
Motorola Thyristor Device Data
5

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