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Número de pieza | IRFP31N50L | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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SMPS MOSFET
PD - 94081
IRFP31N50L
Applications
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
VDSS
500V
RDS(on) typ.
0.15Ω
ID
31A
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
31
ID @ TC = 100°C
IDM
www.DataSheet4U.comPD@TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
20
124
460
Linear Derating Factor
3.7
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 30
19
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
300
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 31
MOSFET symbol
D
––– ––– 124
A showing the
integral reverse
G
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 31A, VGS = 0V
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 31A
di/dt = 100A/µs
––– 570 860 nC TJ = 25°C
––– 1.2 1.8 µC TJ = 125°C
––– 7.9 12 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
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IRFP31N50L
35
VDS
RD
30 VGS D.U.T.
25 RG +-VDD
20 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5 90%
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
www.DataSheet4U.comCase Temperature
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP31N50L.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP31N50L | Power MOSFET ( Transistor ) | International Rectifier |
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